Defect and microstructural evolution in thermally cycled Cu through-silicon vias

Synchrotron-based measurement of the impact of thermal cycling on the evolution of stresses in Cu through-silicon vias

Lower Protrusion of a Copper-Nickel Alloy in a Through-Silicon via and Its Numerical Simulation

The application of Cu-filled through-silicon via (TSV) in 3-D integrated circuit packaging faces several fabrication and reliability issues. In this study, we introduced a Cu-Ni alloy for TSV filling with a high filling speed and a reduced TSV protrusion. In particular, the characteristics of Cu-Ni via protrusions at various annealing temperatures (3200­450°C) were investigated with experimenta...

Characterization of thermal stresses and plasticity in through-silicon via structures for three-dimensional integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress charact...

Surface activated bonding of copper through silicon vias and gold stud bumps at room temperature

A comprehensive investigation of the surfaces of copper through silicon vias Cu-TSVs and gold stud bumps is presented. These vias and stud bumps were bonded at room temperature using a nanobonding and interconnection equipment. The influence of heating on the bonded interface was also studied. In order to achieve an intimate contact between the Au-stud bumps and Cu-TSVs, the stud bumps were fla...

An Insulator-Lined Silicon Substrate-Via Technology With High Aspect Ratio

We have developed a novel high-aspect ratio substratevia technology in silicon that features a SiN insulator liner. In this technology, the via is completely filled with electroplated Cu. We have demonstrated vias with an aspect ratio of 30 and we have verified the integrity of the liner in vias with an aspect ratio of 8. The impedance of individual vias was measured in the microwave regime usi...